Lyra 24S

Introduction

The Lyra 24S is a secure, high-performance wireless module optimized for the needs of battery and line-powered IoT devices running on Bluetooth networks.

Based on the Series 2 EFR32BG24 SoC, it enables Bluetooth® Low Energy connectivity, delivering exceptional RF performance and energy efficiency, industry-leading Se- cure Vault® technology, and future-proofing capabilities.

The Lyra 24S is a complete System in Package solution offered with robust and fully upgradeable software stacks, global regulatory certifications, advanced development and debugging tools, and documentation that simplifies and minimizes the development cycle of your end-product, helping to accelerate its time-to-market.

Overview

This document describes key hardware aspects of the Lyra 24S. This document is intended to assist device manufacturers and related parties with the integration of this radio into their host devices. Data in this document is drawn from several sources. For full documentation on the Lyra 24S, visit:

https://www.ezurio.com/lyra24-series

This datasheet is subject to change. Please contact Ezurio for further information.

image-20251223-150100.png

Application Areas

  • Smart Home Devices
  • Lighting
  • Gateways and Digital Assistants
  • Building Automation and Security

Features & Benefits

The Lyra 24 device features and benefits are described below.

  • Bluetooth Low Energy 5.4
  • Bluetooth Mesh connectivity
  • Built-in antenna or RF pin
  • Up to 10 dBm TX output power (see Maximum Regulatory Certified RF TX Power per Country)
  • -97 dBm BLE 1M RX sensitivity
  • 32-bit ARM® Cortex®-M33 core running up to 78 MHz
  • 1536/256 kB of Flash/RAM memory
  • Vault High or Vault Mid security
  • Rich set of analog and digital peripherals
  • 32 GPIO pins
  • -40 to 105 °C
  • 7mm x 7mm x 1.18mm

Specification Summary

Processor / SoC / Chipset

Wireless
  • Silicon Labs Series 2 EFR32BG24 SoC

    • 2.4 GHz radio
    • TX power up to +10 dBm (see Maximum Regulatory Certified RF TX Power per Country)
    • 32-bit ARM Cortex®-M33 with DSP instruction and floating- point unit for efficient signal processing
    • 1536 kB flash program memory
    • 256 kB RAM data memory
    • Embedded Trace Macrocell (ETM) for advanced debugging

Bluetooth

StandardsBluetooth Low Energy (BLE) 5.4

Bluetooth Mesh

Receive Sensitivity
  • -105.1 dBm (0.1% BER) at 125 kbps GFSK
  • -100.7 dBm (0.1% BER) at 500 kbps GFSK
  • -97.0 dBm (0.1% BER) at 1 Mbps GFSK
  • -94.3 dBm (0.1% BER) at 2 Mbps GFSK
Peripheral Interface32x Multifunction I/O lines
UART1 × Universal Synchronous/Asynchronous Receiver/Transmitter (USART), supporting UART/SPI/SmartCard (ISO 7816)/IrDA/I2S

2 × Enhanced Universal Synchronous/Asynchronous Receiver/Transmitter (EUSART) supporting UART/SPI/DALI/ IrDA

GPIOUp to 32 General Purpose I/O pins with output state retention and asynchronous interrupts
ADC
  • Analog to Digital Converter (ADC)

    • 12-bit @ 1 Msps
    • 16-bit @ 76.9 ksps
ACMP`2 × Analog Comparator (ACMP)
VDAC2 × Digital to Analog Converter (VDAC)
DMA8 Channel DMA Controller
PRS16 Channel Peripheral Reflex System (PRS)
Timers
  • 3 × 16-bit Timer/Counter with 3 Compare/Capture/PWM channels
  • 2 × 32-bit Timer/Counter with 3 Compare/Capture/PWM channels
  • 2 x 32-bit Real Time Counter (SYSRTC/BURTC)
  • 24-bit Low Energy Timer for waveform generation (LETIMER)
  • 16-bit Pulse Counter with asynchronous operation (PCNT)
  • 2 × Watchdog Timer (WDOG)
I2C2 × I2C interface with SMBus support
TEMPDie temperature sensor with +/- 1.5 °C accuracy after single-point calibration
Keypad ScannerKeypad scanner supporting up to 6x8 matrix (KEYSCAN)
RF OscillatorLow-Frequency RC Oscillator with precision mode to replace 32 kHz sleep crystal (LFRCO)

Power

Input Voltage1.8 to 3.8 V
Current Consumption
  • 5.1 mA RX current at 1 Mbps GFSK
  • 4.6 mA TX current at 0 dBm
  • 23.4 mA TX current at 10 dBm
  • 33.4 µA/MHz in Active Mode (EM0) at 39.0 MHz
  • 1.3 μA EM2 DeepSleep current (16 kB RAM retention and RTC running from LFRCO)

Mechanical

Dimensions7 mm x 7 mm x 1.18 mm

Software

Security
  • Secure Boot with Root of Trust and Secure Loader (RTSL)
  • Hardware Cryptographic Acceleration with DPA counter- measures for AES128/256, SHA-1, SHA-2 (up to 256-bit), ECC (up to 256-bit), ECDSA, and ECDH
  • True Random Number Generator (TRNG) compliant with NIST SP800-90 and AIS-31
  • ARM® TrustZone®
  • Secure Debug Interface lock/unlock
  • Secure Key Management with PUF
  • Anti-Tamper
  • Secure Attestation
FirmwareAT Command Set – fully featured and extensible to suit any developer’s needs.

  • Proven over 5+ years
  • Basic Bluetooth LE cable replacement
  • Simplest implementation possible

C Code – Full software development with Silicon Labs SDK and Toolchain

  • Native C code development
  • Use Simplicity Studio IDE
  • Full functionality of Silicon Labs HW / SW

Environmental

Operating Temperature-40 to +105 °C
Lead FreeLead-free and RoHS Compliant

Certifications

Regulatory Compliance
  • CE (EU)
  • UKCA (UK)
  • FCC (USA)
  • ISED (Canada)
  • MIC (Japan)
  • KC (South Korea)
  • RCM (Australia and New Zealand)

Development

Development Kit
  • 453-00142-K1 - Lyra 24 Series - Development Kit - Bluetooth v5.4 PCB Module (10dBm) with integrated antenna
  • 453-00145-K1 - Lyra 24 Series - Development Kit - Bluetooth v5.4 PCB Module (20dBm) with integrated antenna

Warranty

Warranty TermsOne Year Warranty

Architecture

Block Diagrams

The Lyra 24S module is a highly integrated, high-performance system in package with all the hardware components needed to enable 2.4 GHz wireless connectivity and support robust networking capabilities via multiple wireless protocols.

Built around the EFR32BG24 Wireless SoC, the Lyra 24S includes a built-in antenna, an RF matching network (optimized for transmit power efficiency), supply decoupling and filtering components, an LC tank for DC-DC conversion, a 39 MHz reference crystal, and an RF shield. Also, it supports the use of an external 32 kHz crystal as a low frequency reference signal via GPIO pins for use cases demanding maximum energy efficiency.

For designs where an external antenna solution may be beneficial, a module variant with a 50 Ω-matched RF pin instead of the built-in antenna is available.

image-20251223-152044.pngimage-20251223-152243.png

Note: There is only one Module, SIP, LYRA 24S, Integrated Antenna (Silicon Labs EFR32BG24) 453-00170, to create the External Antenna connection requires removal of 0R resistor (as shown in the first diagram above) on customer’s board to allow the external antenna to be connected Lyra 24S pin 3 2G4IO (as shown in the second diagram above).  See section Lyra 24S Module 50 Ohms RF Track Design for Connecting External Antenna with the Lyra 24S.

A simplified internal schematic for the Lyra 24S module is shown below.

image-20251223-152813.png

EFR32BG24 SoC

The EFR32BG24 SoC features a 32-bit ARM Cortex M33 core, a 2.4 GHz high-performance radio, 1536 kB of Flash memory, 256 kB of RAM, a dedicated core for security, a rich set of MCU peripherals, and various clock management and serial interfacing options. See the EFR32xG24 Reference Manual for details.

Integrated Antenna

Lyra 24S modules come with two antenna solution variants: a built-in integral ground loop type antenna realized by a PCB trace design, or a 50Ω-matched RF pin to support an external antenna. Typical performance characteristics for the built-in antenna are detailed in the table below. See Antenna Characteristics and External Antenna Integration with the Lyra 24S Module 453-00170 for other relevant details.

ParameterSymbolTest ConditionMinTypMaxUnit
Antenna frequency rangeFRANGE24002483.5MHz
Antenna GainGMAXMaximum relative to isotropic1.48dBi
Antenna EfficiencyEfficiency-2.5-1.36dB
Reference impedanceZ50
Dielectric Constant Host BoardDICONST4.3
Trace ThicknessTTHICKNESS47um
VSWRVSWRMaximum2:1

Antenna efficiency, gain, and radiation pattern are dependent on the application PCB layout and mechanical design. Antenna specification is based on the assumption that the host board design guidelines in section are followed.

External Antenna

Lyra 24S module can be used with external antennas (certified by Ezurio) and requires a RF 50 Ohm track (Ground Coplanar Waveguide) to be designed to run from Lyra 24S module 2G4IO (pin 6) to an RF antenna connector (IPEX MHF 4) on the host PCB. The 50Ohm RF track design and length MUST be copied as defined in section Lyra 24S Module 50 Ohms RF Track Design for Connecting External Antenna with the Lyra 24S.

The list of supported external antennas (certified by Ezurio) are listed in section External Antenna Integration with the Lyra 24S Module

Power Supply

The Lyra 24S requires a primary supply (VDD) and IO supply (VDDIO) voltage to operate. All necessary decoupling, filtering and DC-DC-related components are included in the module.

General Purpose Input/Output (GPIO)

The Lyra 24S has up to 32 General Purpose Input/Output pins. Each GPIO pin can be individually configured as either an output or input. More advanced configurations including open-drain, open-source, and glitch-filtering can be configured for each individual GPIO pin. The GPIO pins can be overridden by peripheral connections, like SPI communication. Each peripheral connection can be routed to several GPIO pins on the device. The input value of a GPIO pin can be routed through the Peripheral Reflex System to other peripherals. The GPIO subsystem supports asynchronous external pin interrupts.

All of the pins on ports A and port B are EM2 capable. These pins may be used by Low-Energy peripherals in EM2/3 and may also be used as EM2/3 pin wake-ups. Pins on ports C and D are latched/retained in their current state when entering EM2 until EM2 exit upon which internal peripherals could once again drive those pads.

A few GPIOs also have EM4 wake functionality. These pins are listed in Alternate Pin Functions.

Security

Lyra 24S modules support one of two levels in the Security Portfolio offered by Silicon Labs: Secure Vault Mid or Secure Vault High.   Lyra 24S modules support Secure Vault High.

Secure Vault is a collection of technologies that deliver state-of-the-art security and upgradability features to protect and future proof IoT devices against costly threats, attacks, and tampering. A dedicated security CPU enables the Secure Vault functions and isolates cryptographic functions and data from the Cortex-M33 core.  Lyra 24S support Secure Vault High.

Secure Vault Features

FeatureSecure Vault MidSecure Vault High
True Random Number Generator (TRNG)YesYes
Secure Boot with Root of Trust and Secure Loader (RTSL)YesYes
Secure Debug with Lock/UnlockYesYes
DPA CountermeasuresYesYes
Anti-TamperYes
Secure AttestationYes
Secure Key ManagementYes
Symmetric Encryption
  • AES 128 / 192 / 256 bit

    • ECB, CTR, CBC, CFB, CCM, GCM, CBC-MAC, and GMAC
  • AES 128 / 192 / 256 bit

    • ECB, CTR, CBC, CFB, CCM, GCM, CBC-MAC, and GMAC
  • ChaCha20
Public Key Encryption - ECDSA / ECDH / EdDSA
  • p192 and p256
  • p192, p256, p384 and p521
  • Curve25519 (ECDH)
  • Ed25519 (EdDSA)
Key Derivation
  • ECJ-PAKE p192 and p256
  • ECJ-PAKE p192, p256, p384, and p521
  • PBKDF2
  • HKDF
Hashes
  • SHA-1
  • SHA-2/256
  • SHA-1
  • SHA-2 256, 384, and 512
  • Poly1305

Secure Boot with Root of Trust and Secure Loader (RTSL)

The Secure Boot with RTSL authenticates a chain of trusted firmware that begins from an immutable memory (ROM).

It prevents malware injection, prevents rollback, ensures that only authentic firmware is executed, and protects Over The Air updates. For more information about this feature, see Silicon Labs’ AN1218: Series 2 Secure Boot with RTSL.

Cryptographic Accelerator

The Cryptographic Accelerator is an autonomous hardware accelerator with Differential Power Analysis (DPA) countermeasures to protect keys.

It supports AES encryption and decryption with 128/192/256-bit keys, ChaCha20 encryption, and Elliptic Curve Cryptography (ECC) to support public key operations, and hashes.

Supported block cipher modes of operation for AES include:

  • ECB (Electronic Code Book)
  • CTR (Counter Mode)
  • CBC (Cipher Block Chaining)
  • CFB (Cipher Feedback)
  • GCM (Galois Counter Mode)
  • CCM (Counter with CBC-MAC)
  • CBC-MAC (Cipher Block Chaining Message Authentication Code)
  • GMAC (Galois Message Authentication Code)

The Cryptographic Accelerator accelerates Elliptical Curve Cryptography and supports the NIST (National Institute of Standards and Technology) recommended curves including P-192, P-256, P-384, and P-521 for ECDH (Elliptic Curve Diffie-Hellman) key derivation, and ECDSA (Elliptic Curve Digital Signature Algorithm) sign and verify operations. Also supported is the non-NIST Curve25519 for ECDH and Ed25519 for EdDSA (Edwards-curve Digital Signature Algorithm) sign and verify operations.

Secure Vault also supports ECJ-PAKE (Elliptic Curve variant of Password Authenticated Key Exchange by Juggling) and PBKDF2 (Password-Based Key Derivation Function 2).

Supported hashes include SHA-1, SHA-2/256/384/512 and Poly1305.

This implementation provides a fast and energy efficient solution to state of the art cryptographic needs.

True Random Number Generator

The True Random Number Generator module is a non-deterministic random number generator that harvests entropy from a thermal energy source. It includes start-up health tests for the entropy source as required by NIST SP800-90B and AIS-31 as well as online health tests required for NIST SP800-90C.

The TRNG is suitable for periodically generating entropy to seed an approved pseudo random number generator.

Secure Debug with Lock/Unlock

For obvious security reasons, it is critical for a product to have its debug interface locked before being released in the field.

In addition, Secure Vault High also provides a secure debug unlock function that allows authenticated access based on public key cryptography. This functionality is particularly useful for supporting failure analysis while maintaining confidentiality of IP and sensitive end-user data.

For more information about this feature, see Silicon Labs’ AN1190: Series 2 Secure Debug.

DPA Countermeasures

The AES and ECC accelerators have Differential Power Analysis (DPA) countermeasures support. This makes it very expensive from a time and effort standpoint to use DPA to recover secret keys.

Secure Key Management with PUF

Key material in Secure Vault High products is protected by "key wrapping" with a standardized symmetric encryption mechanism. This method has the advantage of protecting a virtually unlimited number of keys, limited only by the storage that is accessible by the Cortex-M33, which includes off-chip storage as well. The symmetric key used for this wrapping and unwrapping must be highly secure because it can expose all other key materials in the system. The Secure Vault Key Management system uses a Physically Unclonable Function (PUF) to generate a persistent device-unique seed key on power up to dynamically generate this critical wrapping/unwrapping key which is only visible to the AES encryption engine and is not retained when the device loses power.

Anti-Tamper

Secure Vault High devices provide internal tamper protection which monitors parameters such as voltage, temperature, and electro- magnetic pulses as well as detecting tamper of the security sub-system itself. Additionally, 8 external configurable tamper pins support external tamper sources, such as enclosure tamper switches.

For each tamper event, the user is able to select the severity of the tamper response ranging from an interrupt, to a reset, to destroying the PUF reconstruction data which will make all protected key materials un-recoverable and effectively render the device inoperable. The tamper system also has an internal resettable event counter with programmable trigger threshold and refresh periods to mitigate false positive tamper events.

For more information about this feature, see Silicon Labs’ AN1247: Anti-Tamper Protection Configuration and Use.

Secure Attestation

Secure Vault High products support Secure Attestation, which begins with a secure identity that is created during the Silicon Labs manufacturing process. During device production, each device generates its own public/private keypair and securely stores the wrapped private key into immutable OTP memory and this key never leaves the device. The corresponding public key is extracted from the device and inserted into a binary DER-encoded X.509 device certificate, which is signed into a Silicon Labs CA chain and then programmed back into the chip into an immutable OTP memory.

The secure identity can be used to authenticate the chip at any time in the life of the product. The production certification chain can be requested remotely from the product. This certification chain can be used to verify that the device was authentically produced by Silicon Labs. The device unique public key is also bound to the device certificate in the certification chain. A challenge can be sent to the chip at any point in time to be signed by the device private key. The public key in the device certificate can then be used to verify the challenge response, proving that the device has access to the securely stored private key, which prevents counterfeit products or impersonation attacks.

For more information about this feature, see Silicon Labs’ AN1268: Authenticating Silicon Labs Devices Using Device Certificates.

Pin-Out / Package Layout

image-20251223-183105.png

For GPIO pin to peripheral assignment in AT firmware, see User Guide – AT Interface Application – Lyra 24 Series.

The next table shows the Lyra 24S pinout and general descriptions for each pin. Refer to Alternate Pin Functions, Analog Peripheral Connectivity, and Digital Peripheral Connectivity for details on functions and peripherals supported by each GPIO pin.

Pin NameNo.DescriptionPin NameNo.Description
DNC1Do not connectGND52GROUND
ANT OUT2Integral Ant OutGND51GROUND
DNC3Do not connectGND50GROUND
DNC4Do not connectGND49GROUND
ANT IN5Integral Ant InGND48GROUND
2G4IO6RF IN/OUTRESETn147RESET
GND7GROUNDPC0946GPIO
PB058GPIOPC0845GPIO
PB049GPIOPC0744GPIO
PB0310GPIOPC0643GPIO
PB0211GPIOPC0542GPIO
GND12GROUNDPC0441GPIO
PB0113GPIOPC0340GPIO
PB0014GPIOPC0239GPIO
PA0015GPIOPC0138GPIO
PA0116GPIOPC0037GPIO
PA0217GPIOPD0036GPIO LF XTAL Output (Optional)
PA0318GPIOPD0135GPIO LF XTAL Input (Optional)
PA0419GPIOPD0234GPIO
PA0520GPIOPD0333GPIO
PA0621GPIOPD0432GPIO
PA0722GPIOPD0531GPIO
PA0823GPIOVDDIO30I/O power supply
PA0924GPIOGND29GROUND
GND25GROUNDVDD28Power supply
VDCDC26Test pin (internal test usage)DECOUPLE27Test pin (internal test usage)

Alternate Pin Functions

Some GPIOs support alternate functions like debugging, wake-up from EM4, external low frequency crystal access, etc. The following table shows both which module pins have alternate capabilities and the functions they support. Refer to the SoCs reference manual for more details.

GPIOAlternate Functions
PA00IADC0.VREFP
PA01GPIO.SWCLK
PA02GPIO.SWDIO
PA03

GPIO.SWV GPIO.TDO

GPIO.TRACEDATA0

PA04GPIO.TDI

GPIO.TRACECLK

PA05GPIO.TRACEDATA1

GPIO.EM4WU0

PA06GPIO.TRACEDATA2
PA07GPIO.TRACEDATA3
PB00VDAC0.VDAC_CH0_MAIN_OU TPUT
PB01GPIO.EM4WU3VDAC0.VDAC_CH1_MAIN_OU TPUT
PB02VDAC1.VDAC_CH0_MAIN_OU TPUT
PB03GPIO.EM4WU4VDAC1.VDAC_CH1_MAIN_OU TPUT
PC00GPIO.EM4WU6
PC01GPIO.EFP_TX_SDA
PC02GPIO.EFP_TX_SCL
PC05GPIO.EFP_INT

GPIO.EM4WU7

PC07GPIO.EM4WU8GPIO.THMSW_ENGPIO.THMSW_HALFSWITCH
PD00LFXO.LFXTAL_O
PD01LFXO.LFXTAL_I

LFXO.LF_EXTCLK

PD02GPIO.EM4WU9

Analog Peripheral Connectivity

Many analog resources are routable and can be connected to numerous GPIO's. The table below indicates which peripherals are available on each GPIO port. When a differential connection is being used, positive inputs are restricted to the EVEN pins and negative inputs are restricted to the ODD pins. When a single ended connection is being used positive input is available on all pins. See the SoC's Reference Manual for more details on the ABUS and analog peripherals.

PeripheralSignalPAPBPCPD
EVENODDEVENODDEVENODDEVENODD
ACMP0ANA_NEGYesYesYesYesYesYesYesYes
ANA_POSYesYesYesYesYesYesYesYes
ACMP1ANA_NEGYesYesYesYesYesYesYesYes
ANA_POSYesYesYesYesYesYesYesYes
IADC0ANA_NEGYesYesYesYesYesYesYesYes
ANA_POSYesYesYesYesYesYesYesYes
VDAC0VDAC_CH0_ABUS_OUT- PUTYesYesYesYesYesYesYesYes
VDAC_CH1_ABUS_OUTYesYesYesYesYesYesYesYes
VDAC1VDAC_CH0_ABUS_OUT- PUTYesYesYesYesYesYesYesYes
VDAC_CH1_ABUS_OUTYesYesYesYesYesYesYesYes

Digital Peripheral Connectivity

Many digital resources are routable and can be connected to numerous GPIOs. The table below indicates which peripherals are available on each GPIO port.

Peripheral.ResourcePORT
PAPBPCPD
ACMP0.DIGOUTAvailableAvailableAvailableAvailable
ACMP1.DIGOUTAvailableAvailableAvailableAvailable
CMU.CLKIN0AvailableAvailable
CMU.CLKOUT0AvailableAvailable
CMU.CLKOUT1AvailableAvailable
CMU.CLKOUT2AvailableAvailable
EUSART0.CSAvailableAvailable
EUSART0.CTSAvailableAvailable
EUSART0.RTSAvailableAvailable
EUSART0.RXAvailableAvailable
EUSART0.SCLKAvailableAvailable
EUSART0.TXAvailableAvailable
EUSART1.CSAvailableAvailableAvailableAvailable
EUSART1.CTSAvailableAvailableAvailableAvailable
EUSART1.RTSAvailableAvailableAvailableAvailable
EUSART1.RXAvailableAvailableAvailableAvailable
EUSART1.SCLKAvailableAvailableAvailableAvailable
EUSART1.TXAvailableAvailableAvailableAvailable
FRC.DCLKAvailableAvailable
FRC.DFRAMEAvailableAvailable
FRC.DOUTAvailableAvailable
HFXO0.BUFOUT_REQ_IN_ASYNCAvailableAvailable
I2C0.SCLAvailableAvailableAvailableAvailable
I2C0.SDAAvailableAvailableAvailableAvailable
I2C1.SCLAvailableAvailable
I2C1.SDAAvailableAvailable
KEYSCAN.COL_OUT_0AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_1AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_2AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_3AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_4AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_5AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_6AvailableAvailableAvailableAvailable
KEYSCAN.COL_OUT_7AvailableAvailableAvailableAvailable
KEYSCAN.ROW_SENSE_0AvailableAvailable
KEYSCAN.ROW_SENSE_1AvailableAvailable
KEYSCAN.ROW_SENSE_2AvailableAvailable
KEYSCAN.ROW_SENSE_3AvailableAvailable
KEYSCAN.ROW_SENSE_4AvailableAvailable
KEYSCAN.ROW_SENSE_5AvailableAvailable
LETIMER0.OUT0AvailableAvailable
LETIMER0.OUT1AvailableAvailable
MODEM.ANT0AvailableAvailableAvailableAvailable
MODEM.ANT1AvailableAvailableAvailableAvailable
MODEM.ANT_ROLL_OVERAvailableAvailable
MODEM.ANT_RR0AvailableAvailable
MODEM.ANT_RR1AvailableAvailable
MODEM.ANT_RR2AvailableAvailable
MODEM.ANT_RR3AvailableAvailable
MODEM.ANT_RR4AvailableAvailable
MODEM.ANT_RR5AvailableAvailable
MODEM.ANT_SW_ENAvailableAvailable
MODEM.ANT_SW_USAvailableAvailable
MODEM.ANT_TRIGAvailableAvailable
MODEM.ANT_TRIG_STOPAvailableAvailable
MODEM.DCLKAvailableAvailable
MODEM.DINAvailableAvailable
MODEM.DOUTAvailableAvailable
PCNT0.S0INAvailableAvailable
PCNT0.S1INAvailableAvailable
PRS.ASYNCH0AvailableAvailable
PRS.ASYNCH1AvailableAvailable
PRS.ASYNCH2AvailableAvailable
PRS.ASYNCH3AvailableAvailable
PRS.ASYNCH4AvailableAvailable
PRS.ASYNCH5AvailableAvailable
PRS.ASYNCH6AvailableAvailable
PRS.ASYNCH7AvailableAvailable
PRS.ASYNCH8AvailableAvailable
PRS.ASYNCH9AvailableAvailable
PRS.ASYNCH10AvailableAvailable
PRS.ASYNCH11AvailableAvailable
PRS.ASYNCH12AvailableAvailable
PRS.ASYNCH13AvailableAvailable
PRS.ASYNCH14AvailableAvailable
PRS.ASYNCH15AvailableAvailable
PRS.SYNCH0AvailableAvailableAvailableAvailable
PRS.SYNCH1AvailableAvailableAvailableAvailable
PRS.SYNCH2AvailableAvailableAvailableAvailable
PRS.SYNCH3AvailableAvailableAvailableAvailable
RAC.LNAENAvailableAvailableAvailableAvailable
RAC.PAENAvailableAvailableAvailableAvailable
TIMER0.CC0AvailableAvailableAvailableAvailable
TIMER0.CC1AvailableAvailableAvailableAvailable
TIMER0.CC2AvailableAvailableAvailableAvailable
TIMER0.CDTI0AvailableAvailableAvailableAvailable
TIMER0.CDTI1AvailableAvailableAvailableAvailable
TIMER0.CDTI2AvailableAvailableAvailableAvailable
TIMER1.CC0AvailableAvailableAvailableAvailable
TIMER1.CC1AvailableAvailableAvailableAvailable
TIMER1.CC2AvailableAvailableAvailableAvailable
TIMER1.CDTI0AvailableAvailableAvailableAvailable
TIMER1.CDTI1AvailableAvailableAvailableAvailable
TIMER1.CDTI2AvailableAvailableAvailableAvailable
TIMER2.CC0AvailableAvailable
TIMER2.CC1AvailableAvailable
TIMER2.CC2AvailableAvailable
TIMER2.CDTI0AvailableAvailable
TIMER2.CDTI1AvailableAvailable
TIMER2.CDTI2AvailableAvailable
TIMER3.CC0AvailableAvailable
TIMER3.CC1AvailableAvailable
TIMER3.CC2AvailableAvailable
TIMER3.CDTI0AvailableAvailable
TIMER3.CDTI1AvailableAvailable
TIMER3.CDTI2AvailableAvailable
TIMER4.CC0AvailableAvailable
TIMER4.CC1AvailableAvailable
TIMER4.CC2AvailableAvailable
TIMER4.CDTI0AvailableAvailable
TIMER4.CDTI1AvailableAvailable
TIMER4.CDTI2AvailableAvailable
USART0.CLKAvailableAvailableAvailableAvailable
USART0.CSAvailableAvailableAvailableAvailable
USART0.CTSAvailableAvailableAvailableAvailable
USART0.RTSAvailableAvailableAvailableAvailable
USART0.RXAvailableAvailableAvailableAvailable
USART0.TXAvailableAvailableAvailableAvailable

Electrical Characteristics

All electrical parameters in all tables are specified under the following conditions, unless stated otherwise:

  • Typical values are based on TA=25 °C and VDD = VDDIO = 3.0 V, by production test and/or technology characterization.
  • Radio performance numbers are measured in conducted mode, based on Silicon Laboratories reference designs using output power-specific external RF impedance-matching networks for interfacing to a 50 Ω antenna.
  • Minimum and maximum values represent the worst conditions across supply voltage, process variation, and operating temperature, unless stated otherwise.

Absolute Maximum Ratings

ParameterSymbolTest ConditionMinTypMaxUnit
Storage temperature rangeTSTG-40+105°C
Voltage on any supply pinVDDMAX-0.33.8V
Voltage ramp rate on any supply pinVDDRAMPMAX1.0V/µs
DC voltage on any GPIO pinVDIGPIN-0.3VVDDIO+0.3V
DC voltage on RESETn pin1VRESETn-0.33.8V
Absolute voltage on RFOUT pinVMAX2G4-0.3VVDD+0.3V
Total current into VDD pinIVDDMAXSource200mA
Total current into GND pinIVSSMAXSink200mA
Current per I/O pinIIOMAXSink50mA
Source50mA
Current for all I/O pinsIIOALLMAXSink200mA
Source200mA

Note 1: The RESETn pin has a pull-up device to the internal DVDD supply. For minimum leakage, RESETn should not exceed the voltage at DVDD, which is generated by theDC-DC converter.DVDD is equal to1.8 Vwhen DC-DC is active and bypassed toVDD when DC-DC is inactive.

Recommended Operating Conditions

ParameterSymbolTest ConditionMinTypMaxUnit
Operating ambient temperature rangeTA-40+105°C
VDD operating supply voltageVVDDDC-DC in regulation2.23.03.8V
DC-DC in bypass1.83.03.8V
VDDIO operating supply voltageVVDDIOAVDDBODEN=0, IOVDDxBODEN=011.713.03.8V
HCLK and SYSCLK frequencyfHCLKVSCALE2, MODE = WS178MHz
VSCALE2, MODE = WS040MHz
VSCALE1, MODE = WS040MHz
EM01 Group A clock frequencyfEM01GRPACLKVSCALE278MHz
VSCALE140MHz
EM01 Group C clock frequencyfEM01GRPCCLKVSCALE278MHz
VSCALE140MHz
Radio HCLK frequencyfRHCLKVSCALE2 or VSCALE139.0MHz

Note:

  1. The AVDD and IOVDD BOD enable bits are intheEMU_BOD3SENSEregister. These BODs are disabled on reset.

DC Electrical Characteristics

RF Transmitter General Characteristics for the 2.4 GHz Band

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
RF tuning frequency rangeFRANGE24022480MHz
Maximum TX power (see Maximum Regulatory Certified RF TX Power per Country)POUTMAX10 dBm10.0dBm
0 dBm-1.4dBm
Minimum active TX powerPOUTMIN10 dBm-29.1dBm
0 dBm-24.9dBm
Output power step sizePOUTSTEP0 dBm0.10.610dB
10 dBm, -5 dBm < Output power < 0 dBm0.20.71.7dB
10 dBm, 0 dBm < Output power < 10 dBm0.040.20.8dB
Output power variation vs supply voltage variation, frequency = 2450 MHzPOUTVAR_V10 dBm output power with VDD voltage swept from 1.8 V to 3.8 V0.02dB
0 dBm output power with VDD voltage swept from 1.8 V to 3.8 V0.06dB
Output power variation vs temperature, Frequency = 2450 MHzPOUTVAR_T0 dBm, (-40 to +105 °C)1.1dB
Output power variation over the RF tuning frequency rangePOUTVAR_F10 dBm0.6dB
0 dBm0.07dB

RF Receiver General Characteristics for the 2.4 GHz Band

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
RF tuning frequency rangeFRANGE24022480MHz

RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 1 Mbps Data Rate

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
Rx Max Strong Signal Input Level for 0.1% BERRXSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload1-97dBm
Signal is reference signal, 255 byte payload1-95.4dBm
With non-ideal signals2 1-95.0dBm
Signal to co-channel interfererC/ICC(see notes)1 38.7dB
N ± 1 Adjacent channel selectivityC/I1Interferer is reference signal at +1 MHz offset1 4 3 5-5.4dB
Interferer is reference signal at -1 MHz offset1 4 3 5-5.3dB
N ± 2 Alternate channel selectivityC/I2Interferer is reference signal at +2 MHz offset1 4 3 5-40.9dB
Interferer is reference signal at -2 MHz offset1 4 3 5-39.7dB
N ± 3 Alternate channel selectivityC/I3Interferer is reference signal at +3 MHz offset1 4 3 5-45.5dB
Interferer is reference signal at -3 MHz offset1 4 3 5-45.7dB
Selectivity to image frequencyC/IIMInterferer is reference signal at image frequency with 1 MHz precision1 5-23.3dB
Selectivity to image frequency ± 1 MHzC/IIM_1Interferer is reference signal at image frequency +1 MHz with 1 MHz precision1 5-40.9dB
Interferer is reference signal at image frequency -1 MHz with 1 MHz precision1 5-5.4dB
Intermodulation performanceIMn = 3 (see note6)-17.3dBm

Notes:

  1. 0.017% Bit Error Rate.
  2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  3. Desired signal -67 dBm.
  4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  5. With allowed exceptions.
  6. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A ,Section 4.4

RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 2 Mbps Data Rate

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
Rx Max Strong Signal Input Level for 0.1% BERRXSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37 byte payload1-94.3dBm
Signal is reference signal, 255 byte payload1-92.7dBm
With non-ideal signals2 1-92.5dBm
Signal to co-channel interfererC/ICC(see notes)1 38.6dB
N ± 1 Adjacent channel selectivityC/I1Interferer is reference signal at +2 MHz offset1 4 3 5-5.3dB
Interferer is reference signal at -2 MHz offset1 4 3 5-5.8dB
N ± 2 Alternate channel selectivityC/I2Interferer is reference signal at +4 MHz offset1 4 3 5-42.2dB
Interferer is reference signal at -4 MHz offset1 4 3 5-44.2dB
N ± 3 Alternate channel selectivityC/I3Interferer is reference signal at +6 MHz offset1 4 3 5-48.1dB
Interferer is reference signal at -6 MHz offset1 4 3 5-50.2dB
Selectivity to image frequencyC/IIMInterferer is reference signal at image frequency with 1 MHz precision1 5-22.8dB
Selectivity to image frequency ± 2 MHzC/IIM_1Interferer is reference signal at image frequency +2 MHz with 1

MHz precision1 5

-42.2dB
Interferer is reference signal at image frequency -2 MHz with 1 MHz precision1 5-5.3dB
Intermodulation performanceIMn = 3 (see note6)-18.3dBm

Notes:

  1. 0.017% Bit Error Rate.
  2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  3. Desired signal -64 dBm.
  4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  5. With allowed exceptions.
  6. As specified in Bluetooth Core specification version 5.1, Vol 6, Part A, Section 4.4

RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 500 kbps Data Rate

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
Rx Max Strong Signal Input Level for 0.1% BERRXSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37-byte payload1-100.7dBm
Signal is reference signal, 255-byte payload1-99.4dBm
With non-ideal signals2 1-98.4dBm
Signal to co-channel interfererC/ICC(see notes)1 32.7dB
N ± 1 Adjacent channel selectivityC/I1Interferer is reference signal at +1 MHz offset1 4 3 5-7.1dB
Interferer is reference signal at -1 MHz offset1 4 3 5-7.4dB
N ± 2 Alternate channel selectivityC/I2Interferer is reference signal at +2 MHz offset1 4 3 5-46.8dB
Interferer is reference signal at -2 MHz offset1 4 3 5-49.7dB
N ± 3 Alternate channel selectivityC/I3Interferer is reference signal at +3 MHz offset1 4 3 5-49.4dB
Interferer is reference signal at -3 MHz offset1 4 3 5-54.5dB
Selectivity to image frequencyC/IIMInterferer is reference signal at image frequency with 1 MHz precision1 5-49dB
Selectivity to image frequency ± 1 MHzC/IIM_1Interferer is reference signal at image frequency +1 MHz with 1

MHz precision1 5

-49.4dB
Interferer is reference signal at image frequency -1 MHz with 1 MHz precision1 5-46.8dB

Notes:

  1. 0.017% Bit Error Rate.
  2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  3. Desired signal -72 dBm.
  4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  5. With allowed exceptions.

RF Receiver Characteristics for Bluetooth Low Energy in the 2.4 GHz Band 125 kbps Data Rate

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. RF center frequency 2.45 GHz. TA = 25°C.

ParameterSymbolTest ConditionMinTypMaxUnit
Rx Max Strong Signal Input Level for 0.1% BERRXSATSignal is reference signal110dBm
SensitivitySENSSignal is reference signal, 37-byte payload1-105.1dBm
Signal is reference signal, 255-byte payload1-104.7dBm
With non-ideal signals2 1-104.3dBm
Signal to co-channel interfererC/ICC(see notes)1 30.9dB
N ± 1 Adjacent channel selectivityC/I1Interferer is reference signal at +1 MHz offset1 4 3 5-12.4dB
Interferer is reference signal at -1 MHz offset1 4 3 5-12.8dB
N ± 2 Alternate channel selectivityC/I2Interferer is reference signal at +2 MHz offset1 4 3 5-52.6dB
Interferer is reference signal at -2 MHz offset1 4 3 5-55.5dB
N ± 3 Alternate channel selectivityC/I3Interferer is reference signal at +3 MHz offset1 4 3 5-53.8dB
Interferer is reference signal at -3 MHz offset1 4 3 5-60dB
Selectivity to image frequencyC/IIMInterferer is reference signal at image frequency with 1 MHz precision1 5-53dB
Selectivity to image frequency ± 1 MHzC/IIM_1Interferer is reference signal at image frequency +1 MHz with 1 MHz precision1 5-53.8dB
Interferer is reference signal at image frequency -1 MHz with 1 MHz precision1 5-52.6dB

Notes:

  1. 0.017% Bit Error Rate.
  2. With non-ideal signals as specified in Bluetooth Test Specification RF-PHY.TS.5.0.1 section 4.7.1
  3. Desired signal -79 dBm.
  4. Desired frequency 2402 MHz ≤ Fc ≤ 2480 MHz.
  5. With allowed exceptions.

High-Frequency Crystal

ParameterSymbolTest ConditionMinTypMaxUnit
Crystal frequencyfHFXTAL39MHz
Initial calibrated accuracyACCHFXTAL-5+5ppm
Temperature driftDRIFTHFXTALAcross specified temperature range-3030ppm

Low-Frequency Crystal Oscillator

ParameterSymbolTest ConditionMinTypMaxUnit
Crystal FrequencyFLFXO32.768kHz
Supported Crystal equivalent series resistance (ESR)ESRLFXOGAIN = 080kΩ
GAIN = 1 to 3100kΩ
Supported range of crystal load capacitance 1CL_LFXOGAIN = 046pF
GAIN = 1610pF
GAIN = 2 (see note2)1012.5pF
GAIN = 3 (see note2)12.518pF
Current consumptionICL12p5ESR=70 kΩ, CL=12.5pF, GAIN3 = 2, AGC4 = 1294nA
Startup TimeTSTARTUPESR=70 kΩ, CL=7pF, GAIN3 = 1, AGC4 = 152ms
On-chip tuning cap step sizeSSLFXO0.26pF
On-chip tuning capacitor value at minimum setting5CLFXO_MINCAPTUNE = 05.2pF
On-chip tuning capacitor value at maximum setting5CLFXO_MAXCAPTUNE = 0x4F26.2pF

Notes:

  1. Total load capacitance seen by the crystal
  2. Crystals with a load capacitance of greater than 12 pF require external load capacitors.
  3. In LFXO_CAL Register
  4. In LFXO_CFG Register
  5. The effective load capacitance seen by the crystal will be CLFXO/2. This is because each
  6. XTAL pin has a tuning cap and the two caps will be seen in series by the crystal

Precision Low Frequency RC Oscillator (LFRCO)

ParameterSymbolTest ConditionMinTypMaxUnit
Nominal oscillation frequencyFLFRCO32.768kHz
Frequency accuracyFLFRCO_ACCNormal mode-33%
Precision mode1, across operating temperature range2-500500ppm
Startup timetSTARTUPNormal mode204µs
Precision mode111.7ms
Current consumptionILFRCONormal mode189.9nA
Precision mode1, T = stable at 25

°C 3

649.8nA

Notes:

  1. The LFRCO operates in high-precision mode when CFG_HIGHPRECEN is set to 1. High-precision mode is not available in EM4.
  2. Includes ± 40 ppm frequency tolerance of the HFXO crystal.
  3. Includes periodic re-calibration against HFXO crystal oscillator.

GPIO Pins

ParameterSymbolTest ConditionMinTypMaxUnit
Leakage currentILEAK_IOMODEx = DISABLED, VDD = VDDIO = 3.0 V2.5nA
Input low voltage1VILAny GPIO pin0.3*VDDIOV
RESETn0.3*DVDDV
Input high voltage1VIHAny GPIO pin0.7*VDDIOV
RESETn0.7*DVDDV
Hysteresis of input voltageVHYSAny GPIO pin0.05*VDDIOV
RESETn0.05*DVDDV
Output high voltageVOHSourcing 20 mA, VDDIO = 3.0 V0.8*VDDIOV
Output low voltageVOLSinking 20 mA, VDDIO = 3.0 V0.2*VDDIOV
GPIO rise timeTGPIO_RISEVDDIO = 3.0 V, Cload = 50pF, SLEWRATE = 4, 10% to 90%8.4ns
GPIO fall timeTGPIO_FALLVDDIO = 3.0 V, Cload = 50pF, SLEWRATE = 4, 90% to 10%7.1ns
Pull up/down resistance2RPULLAny GPIO pin. Pull-up to VDDIO: MODEn = DISABLE DOUT=1.

Pull-down to GND: MODEn = WIREDORPULLDOWN DOUT = 0.

354455kΩ
RESETn pin. Pull-up to DVDD354455kΩ
Maximum filtered glitch widthTGFMODE = INPUT, DOUT = 127ns

Notes:

  1. GPIO input thresholds are proportional to the VDDIO pin. RESETn input thresholds are proportional to the internal DVDD supply, which is generated by the DC-DC converter. DVDD is equal to 1.8 V when DC-DC is active and bypassed to VDD when DC-DC is inactive.
  2. GPIO pull-ups connect to VDDIO supply, pull-downs connect to GND. RESETn pull-up connects to internal DVDD supply, which is generated by the DC-DC converter. DVDD is equal to 1.8 V when DC-DC is active and bypassed to VDD when DC-DC is inactive.

Microcontroller Peripherals

The set of peripherals available in Lyra 24S modules includes:

  • 12-bit 1 Msps ADC
  • Analog Comparators
  • 16-bit and 32-bit Timers/Counters
  • 24-bit Low Energy Timer for waveform generation
  • 32-bit Real Time Counter
  • USART (UART/SPI/SmartCards/IrDA/I2S)
  • I2C peripheral interfaces
  • 12 Channel Peripheral Reflex System

Details on their electrical performance can be found in the relevant portions of Section 4 of the EFR32BG24 SoC datasheet.

To learn which GPIO ports provide access to every peripheral, consult Analog Peripheral Connectivity and Digital Peripheral Connectivity.

Current Consumption

MCU Current Consumption at 3.0V

Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. Voltage scaling level = VSCALE1. TA = 25 °C. Minimum and maximum values in this table represent the worst conditions across process variation at TA = 25 °C.

ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in EM0 mode with all peripherals disabledIACTIVE78 MHz HFRCO w/ DPLL referenced to 39 MHz crystal, CPU running Prime from flash, VSCALE233.3µA/MHz
78 MHz HFRCO w/ DPLL referenced to 39 MHz crystal, CPU running while loop from flash, VSCALE232.8µA/MHz
78 MHz HFRCO w/ DPLL referenced to 39 MHz crystal, CPU running CoreMark loop from flash, VSCALE249.1µA/MHz
39 MHz crystal, CPU running Prime from flash33.9µA/MHz
39 MHz crystal, CPU running while loop from flash33.4µA/MHz
39 MHz crystal, CPU running CoreMark loop from flash49.4µA/MHz
38 MHz HFRCO, CPU running while loop from flash28.1µA/MHz
Current consumption in EM1 mode with all peripherals disabledIEM178 MHz HFRCO w/ DPLL referenced to 39 MHz crystal, VSCALE222.6µA/MHz
39 MHz crystal24.4µA/MHz
38 MHz HFRCO19.0µA/MHz
Current consumption in EM2 mode, VSCALE0IEM2_VS256 kB RAM and full Radio RAM retention, RTC running from LFXO13.1µA
256 kB RAM and full Radio RAM retention, RTC running from LFRCO13.1µA
16 kB RAM and full Radio RAM retention, RTC running from LFXO11.3µA
16 kB RAM and full Radio RAM retention, RTC running from LFRCO11.3µA
16 kB RAM and full Radio RAM retention, RTC running from LFRCO in precision mode11.9µA
Current consumption in EM3 mode, VSCALE0IEM3_VS256 kB RAM and full Radio RAM retention, RTC running from ULFRCO12.9µA
16 kB RAM and full Radio RAM retention, RTC running from ULFRCO11.1µA
Current consumption in EM4 modeIEM4No BURTC, no LF oscillator0.31µA
BURTC with LFXO0.64µA
Current consumption during resetIRSTHard pin reset held467µA

Note:

  1. CPU cache retained, EM0/1 peripheral states retained

Radio Current Consumption with 3.0 V Supply

RF current consumption measured with MCU in EM1 and all MCU peripherals disabled. Unless otherwise indicated, typical conditions are: VDD = VDDIO = 3.0 V, DC-DC in regulation. TA = 25 °C.

ParameterSymbolTest ConditionMinTypMaxUnit
Current consumption in receive mode, active packet reception, VSCALE1, EM1PIRX_ACTIVE125 kbit/s, 2GFSK, f = 2.4 GHz5.4mA
500 kbit/s, 2GFSK, f = 2.4 GHz5.5mA
1 Mbit/s, 2GFSK, f = 2.4 GHz5.1mA
2 Mbit/s, 2GFSK, f = 2.4 GHz5.8mA
Current consumption in receive mode, listening for packet, VSCALE1, EM1PIRX_LISTEN125 kbit/s, 2GFSK, f = 2.4 GHz5.4mA
500 kbit/s, 2GFSK, f = 2.4 GHz5.4mA
1 Mbit/s, 2GFSK, f = 2.4 GHz5.0mA
2 Mbit/s, 2GFSK, f = 2.4 GHz5.8mA
Current consumption in transmit modeITXf = 2.4 GHz, CW, 10 dBm output power23.4mA

Integration Guidelines

Antenna Characteristics

Typical Lyra 24S radiation patterns for the built-in antenna under optimal operating conditions are plotted in the figures that follow. Antenna gain and radiation patterns have a strong dependence on the size and shape of the application PCB the module is mounted on, as well as on the proximity of any mechanical design to the antenna.

image-20251223-181938.pngimage-20251223-181958.pngimage-20251223-182022.pngimage-20251223-182042.png

Impact of Human Body and Other Materials in Close Proximity

Placing the module in contact with or very close to the human body will negatively impact antenna efficiency and reduce range.

Avoid placing plastic or any other dielectric material near the antenna. Conformal coating and other thin dielectric layers are acceptable directly on top of the antenna region, but this will also negatively impact antenna efficiency and reduce range.

Any metallic objects near the antenna will prevent the antenna from radiating freely. The minimum recommended distance of metallic and/or conductive objects is 10 mm in any direction from the antenna except in the directions of the application PCB ground planes.

Circuit (Overview and Checklist)

PCB Layout

PCB Layout on Host PCB - General

For optimal performance of the Lyra 24S the following guidelines are recommended:

  • Place the module 1.50 mm from the edge of the copper “keep-in” area at the middle of the long edge of the application PCB, as illustrated in Recommended Layout for Lyra 24S (Integrated Antenna) below.
  • Copy the exact design from TOP Layer Antenna Layout with Coordinates below with the values for coordinates A to L given in Antenna Polygon Coordinates table below, Referenced to Center of Lyra 24S.
  • Make a cutout in all lower layers aligned with the right edge and the bottom edge of the integral loop antenna as indicated by the red box in Antenna Clearance in Inner and Bottom Layers below.
  • Connect all ground pads directly to a solid ground plane in the top layer.
  • Connect 2G4IO to ANT_IN through a 0-ohm resistor.
  • The 0-ohm gives the ability to test conducted and to evaluate the antenna impedance in the design.
  • Place ground vias as close to the ground pads of the Lyra 24S as possible.
  • Place ground vias along the antenna loop right and bottom side.
  • Place ground vias along the edges of the application board.
  • Do not place plastic or any other dielectric material in contact with the antenna.
  • A minimum clearance of 0.5 mm is advised.
  • Solder mask, conformal coating and other thin dielectric layers are acceptable directly on top of the antenna region.
  • Proper module placement and electrical connection should be ensured by measuring radiated output power from antenna.
  • Impedance of the antenna can be verified by measuring S11 at ANT_IN pin that is corresponding antenna specification.
  • With an external antenna, use a 50Ω trace to connect RF signal to the antenna, as it is illustrated in section  Lyra 24S Module 50 Ohms RF Track Design for Connecting External Antenna with the Lyra 24S.
image-20251223-184143.pngimage-20251223-184203.png

Antenna Polygon Coordinates, Referenced to Center of Lyra 24S

PointCoordinate
A(2.10, 3.30)
B(2.40, 3.30
C(2.40, 4.20)
D(2.10, 5.00)
E(7.35, 5.00)
F(7.35, 4.20)
G(7.35, -0.03)
H(6.59, -0.30)
I(3.39, 2.90)
J(3.05, 2.90)
K(2.27, 2.13)
L(-0.08, 2.13)
M(-0.08, 5.00)

Tolerance for the coordinates is +/- 0.05 mm.

image-20251223-184319.png

Best Design Practices

  • The design of a good RF system relies on thoughtful placement and routing of the RF signals. The following guidelines are recommended:
  • Place the Lyra 24S and antenna close to the center of the longest edge of the application board.
  • Do not place any circuitry between the board edge and the antenna.
  • Make sure to tie all GND planes in the application board together with as many vias as can be fitted.
  • Generally, ground planes are recommended in all areas of the application board except in the antenna keep-out area shown in the previous diagram.
  • Open-ended stubs of copper in the outer layer ground planes must be removed if they are more than 5 mm long to avoid radiation of spurious emissions.
  • The width of the GND plane to the sides of the Lyra 24S will impact the efficiency of the on-board integral loop antenna.
  • To achieve optimal performance, a GND plane width of 55 mm is recommended as seen below.
image-20251223-184810.png
  • See Antenna Radiation and Efficiency for Lyra 24S Integrated Antenna for reference. The below illustrates layout scenarios that will lead to severely degraded RF performance for the application board. Antenna Keep-Out on Host PCB.
image-20251223-184849.png

Radio Performance vs. Carrier Board Size

As with most applications, the carrier board size is determined by the overall form factor or size of the additional circuitry. The recommended carrier board width of 55 mm is thus not always possible in the end-application. If another form factor is required, the antenna performance of the integrated antenna will likely be compromised, but it may still be sufficiently good for providing the required link quality and range of the end-application. As can be seen below, the best performance is achieved for a carrier board size of 55 mm x 30 mm, with relatively constant performance for larger boards and rapidly declining performance for smaller boards.

image-20251223-185017.png

WARNING: Any antenna tuning, and/or change of the loop dimensions, is likely to invalidate a modular certification, unless it is done to compensate for the degradation caused by a host board deviating in size from the manufacturer's best-case reference. Separate guidance might be provided by the manufacturer to address this particular kind of degradation, in which case a Permissive Change to the modular approval might not even become necessary: however, since this is evaluated on a case-by-case basis, please consult your certification house on the best approach.

External Antenna Integration

Lyra 24S Module 50 Ohms RF Track Design for Connecting External Antenna with the Lyra 24

Lyra 24S module can be used with external antennas (certified by Ezurio), and requires a 50 Ohm RF trace (GCPW, that Grounded Coplanar Waveguide) to be designed to run from Lyra 24S module 2G4IO (pin6) to a RF antenna connector (IPEX MHF4) on host PCB.  The 50 Ohms RF track design and length MUST be copied (as specified in this section).  Lyra 24SP module GND pin7 used to support GCPW 50Ohm RF trace.

Lyra 24S for External antenna connection host PCB 50-Ohm RF trace schematic with MHF4 RF connector

Lyra 24S External antenna connectionLyra 24S Internal antenna connection
  1. Fit IPEX MHF4 RF connector (20449-001E), J3.
  1. Fit 0R resistor (position R940 in below SCH) between Lyra 24S module pin6 (2G4IO) and IPEX MHF4 RF connector (20449-001E).
  1. Leave Lyra 24S module pin5 (ANT_IN) open circuited.
  1. Fit 0R resistor (position R939 in below SCH) between Lyra 24S module pin6 (2G4IO) and pin5 (ANT_IN).
  1. Do not Fit R940 and J3 (positions in below SCH).
  1. Lyra 24S pin5 (ANT_IN internal antenna PCB layout MUST be followed.
image-20251223-190015.pngimage-20251223-190046.pngimage-20251223-190036.pngimage-20251223-190055.png

Layer1 (RF Track and RF GND)

image-20251223-190146.png

Layer2 (RF GND)

image-20251223-190206.png

Checklist for PCB:

  • MUST use a 50-Ohm RF trace (GCPW, that is Grounded Coplanar Waveguide) from 2F4IO (pin6) of the Lyra 24S module (453-00170) to RF antenna connector (IPEX MHF4 Receptable (MPN: 20449-001E)) on host PCB.
  • To ensure regulatory compliance, MUST follow exactly the following considerations for 50-Ohms RF trace design and test verification:
image-20251223-190318.pngimage-20251223-190401.png

Note:

  • The plating (ENIG) above base 1ounce copper is not listed, but plating expected to be ENIG.
  • The 50-Ohms RF trace design MUST be Grounded Coplanar Waveguide (GCPW) with

    • Layer1 RF track width (W) of 20 mil and
    • Layer1 gap (S) to GND of 5 mil and where the
    • Layer1 to Layer 2 dielectric thickness (H) MUST be 57.6 mil (dielectric constant Er 4.2).
    • Further the Layer1 base copper must be 1-ounce base copper (that is 1.5 mil) plus the plating and
    • Layer1 MUST be covered by solder mask of 1.0 mil thickness (dielectric constant Er 3.5).
  • The 50-Ohms RF trace design MUST follow the PCB stack-up shown above. (Layer1 to Layer2 thickness MUST be identical to the Lyra 24S development board).
  • The 50-Ohms RF track should be a controlled-impedance trace e.g., ±10%.
  • The 50-Ohms RF trace length MUST be identical (as seen in Layer 2 diagram above) (159.57 mil) to that on the Lyra 24S development board from Lyra 24S module 2G4IO RF pad (pin6) to the RF connector IPEX MHF4 Receptable (MPN: 20449-001E).
  • Place GND vias regularly spaced either side of 50-Ohms RF trace to form GCPW (Grounded coplanar waveguide) transmission line as shown in Layer 2 diagram above and use Lyra 24S module GND pin7.
  • Use spectrum analyzer to confirm the radiated (and conducted) signal is within the certification limit.

External Antenna Integration with the Lyra 24S Module 453-00170

Please refer to the Lyra 24S Regulatory Information Guide for details on using Lyra 24S module with external antennas in each regulatory region. The Lyra 24S has been designed to operate with the below external antennas (with a maximum gain of 2.0dBi). The required antenna impedance is 50 ohms. See below. External antennas improve radiation efficiency.

ManufacturerModelEzurio Connectivity
Part Number
Weight
(g)
Dimensions (mm)TypeConnectorPeak Gain 2400-2500 MHzPeak Gain 2400-2480 MHz
Ezurio

(Laird Connectivity)

NanoBlueEBL2400A1-10MH4L244.45 x 12.7 x 0.81PCB DipoleIPEX MHF42 dBi-
Ezurio

(Laird Connectivity)

FlexPIFA001-00221.1340.1 x 11.0 x 2.5PIFAIPEX MHF4-2 dBi
Mag LayersEDA-8709-2G4C1-B27-CY0600-00057NANADipoleIPEX MHF42 dBi-
Ezurio

(Laird Connectivity)

mFlexPIFAEFA2400A3S-10MH4L1.825.4 × 23.4 × 2.5PIFAIPEX MHF4-2 dBi

Host Platform Implementation Details

Network Co-Processor (NCP) Application with UART Host

The Lyra 24S can be controlled via the UART interface as a peripheral to an external host processor. Typical power supply, programming/debug interface, and host interface connections are shown in the figure below.  For more details, see AN958: Debugging and Programming Interfaces for Custom Designs.

Note: For boot pin, see Boot section.

image-20251223-182404.png

SoC Application

The Lyra 24S can be used in a stand-alone SoC configuration without an external host processor. Typical power supply and programming/debug interface connections are shown in the figure below.  For more details, see AN958: Debugging and Programming Interfaces for Custom Designs.

image-20251223-182544.png

Boot

The BOOT pin is used to determine when execution of the bootloader is required. Upon reset, execution of the bootloader begins. The state of the BOOT pin is read immediately upon start-up of the bootloader. If LOW, execution of the bootloader continues, facilitating firmware update via the UART. If the BOOT pin is HIGH, the bootloader will stop execution and pass control to the main application firmware.

Reset

The Lyra 24S can be reset by pulling the RESET line low, by the internal watchdog timer, or by software command. The reset state does not provide power saving functionality and it is not recommended as a means to conserve power.

Debug

See Silicon Labs’ AN958: Debugging and Programming Interfaces for Custom Designs.

The Lyra 24S supports hardware debugging via 4-pin JTAG or 2-pin serial-wire debug (SWD) interfaces. It is recommended to expose the debug pins in your own hardware design for firmware update and debug purposes. The table below lists the required pins for JTAG and SWD debug interfacing, which are also presented in Alternate Pin Functions.

If JTAG interfacing is enabled, the module must be power cycled to return to a SWD debug configuration if necessary.

Pin NameJTAG SignalSWD SignalComments
PA04TDIN/AThis pin is disabled after reset. Once enabled the pin has a built-in pull-up.
PA03TDON/AThis pin is disabled after reset.
PA02TMSSWDIOPin is enabled after reset and has a built-in pull-up.
PA01TCKSWCLKPin is enabled after reset and has a built-in pull-down.

Packet Trace Interface (PTI)

The Lyra 24S integrates a true PHY-level packet trace interface (PTI) peripheral that can capture packets non-intrusively to monitor and log device and network traffic without burdening processing resources in the module's SoC. The PTI generates two output signals that can serve as a powerful debugging tool, especially in conjunction with other hardware and software development tools available from Silicon Labs. The PTI_DATA and PTI_FRAME signals can be accessed through any GPIO on ports C and D (see FRC.DOUT and FRC.DFRAME peripheral resources in Pin Out / Package Layout).

WL_DEV_WAKE Mapping

Application Note for Surface Mount Modules

Shipping and Labeling

image-20251223-191611.png

PCB Land Pattern

image-20251223-191713.png

Notes:

  1. All dimensions shown are in millimeters (mm) unless otherwise noted.
  1. Dimensioning and Tolerancing is per the ANSI Y14.5M-1994 specification.
  1. This Land Pattern Design is based on IPC-SM-782 guidelines.
  1. All dimensions shown are at Maximum Material Condition (MMC). Least Material Condition (LMC) is calculated based on a Fabrication Allowance of 0.05mm.
  1. All pads are to be non-solder mask defined (NSMD). Clearance between the solder mask and the metal pad is to be 60um minimum, all the way around the pad.
  1. A stainless steel, laser-cut and electro-polished stencil with trapezoidal walls should be used to assure good solder paste release.
  1. The stencil thickness should be 0.125mm (5 mils).

10. The ratio of stencil aperture to land pad size should be 1:1 for all perimeter pads.

11. A No-Clean, Type-3 solder paste is recommended.

12. The recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small Body Components.

Above notes and stencil design are shared as recommendations only. A customer or user may find it necessary to use different parameters and fine tune their SMT process as required for their application and tooling.

Package Marking

image-20251223-191828.png
Part NumberLine 1 MarkingLine 2 MarkingLine 3 MarkingLine 4 Marking
453-00170453-00170LYRA 24SYYWWTTTTTT

See Note 1

CC

See Note 2

Notes:

  1. YY = Year. WW = Work Week, TTTTTTT = Trace Code
  1. Country of Origin ISO Code Abbreviation.

Tray and Reel

Lyra 24S modules are delivered to the customer in Tray or reel. Find the packaging dimensions below. All dimensions are given in mm unless otherwise indicated.

image-20251223-192425.pngimage-20251223-192455.png

Recommended Stencil Aperture

Reflow Parameters/ Soldering

Reflow for lead Free Solder Paste

Optimal solder reflow profile depends on solder paste properties and should be optimized as part of an overall process development.

  • It is important to provide a solder reflow profile that matches the solder paste supplier's recommendations.
  • Temperature ranges beyond that of the solder paste supplier's recommendation could result in poor solderability.
  • All solder paste suppliers recommend an ideal reflow profile to give the best solderability.

Recommended Reflow Profile for lead Free Solder Paste

image-20251223-192006.png

Miscellaneous

Cleaning

In general, cleaning the populated modules is strongly discouraged. Residuals under the module cannot be easily removed with any cleaning process.

  • Cleaning with water can lead to capillary effects where water is absorbed into the gap between the host board and the module. The combination of soldering flux residuals and encapsulated water could lead to short circuits between neighboring pads. Water could also damage any stickers or labels.
  • Cleaning with alcohol or a similar organic solvent will likely flood soldering flux residuals into the RF shield, which is not accessible for post-washing inspection. The solvent could also damage any stickers or labels.
  • Ultrasonic cleaning could damage the module permanently.

Rework

The Lyra 24P module can be unsoldered from the host board if the Moisture Sensitivity Level (MSL) requirements are met as described in this datasheet.

Never attempt a rework on the module itself, i.e. replacing individual components. Such actions terminate warranty coverage.

Environmental and Reliability

Environmental Requirements

Handling Requirements

The Lyra 24P module contain a highly sensitive electronic circuitry. Handling without proper ESD protection may damage the module permanently.

Moisture Sensitivity Level (MSL)

Per J-STD-020, devices rated as MSL 4 and not stored in a sealed bag with desiccant pack should be baked prior to use.

Devices are packaged in a Moisture Barrier Bag with a desiccant pack and Humidity Indicator Card (HIC). Devices that will be subjected to reflow should reference the HIC and J-STD-033 to determine if baking is required.

If baking is required, refer to J-STD-033 for bake procedure.

Required Storage Conditions

Per J-STD-033, the shelf life of devices in a Moisture Barrier Bag is 12 months at <40C and <90% room humidity (RH).

Do not store in salty air or in an environment with a high concentration of corrosive gas, such as Cl2, H2S, NH3, SO2, or NOX. Do not store in direct sunlight.

The product should not be subject to excessive mechanical shock.

Repeated Reflow Soldering

Only a single reflow soldering process is encouraged for host boards.

Reliability Tests

Climatic and Dynamic

Test NameTest ConditionQualificationLoT ID or StartFail/Pass or EndNotesSummaryStatus
Test Group A – Accelerated Environment Stress Tests
THBJA101

85°C, 85%RH

Vcc=3.8V, 1000 hours

3 lots, N=>25Q048531 Q048715 Q0485330/25

0/33

0/25

1

1

1

3 lots 0/83Pass
Temp CycleJA104

Cond C: -65°C to 150°C

500 cycles

3 lots, N=>25Q048534 Q048535 Q0485260/25

0/25

0/25

1

1

1

3 lots 0/75Pass
HTSLJA103

150°C, 1000hr

3 lots, N=>25Q048444 Q048529 Q0485300/25

0/25

0/25

1

1

1

3 lots 0/75Pass
Test Group B – Accelerated Lifetime Simulation Tests
HTOLJA108

TJ ≥ 125°C, Dynamic Vcc=3.8V, 1000 hours

3 lots, N=>77Q048618 Q049010 Q048287 Q049006 Q048200 Q0490050/55

0/32

0/58

0/20

0/49

0/55

2

2

2

2

2

2

6 lots 0/269Pass
LTOLJA108

TA = -10°C, Dynamic

Vcc=3.8V, 1000 hours

1 lot, N=>32Q0428710/5921 lot

0/59

Pass
ELFRJA108

TJ ≥ 125°C, Dynamic Vcc=3.8V, 48 hours

3 lots, N=>500Q048286 Q049476 Q048085 Q0490070/494

0/6

0/504

0/534

2

2

2

2

4 lots 0/1538Pass
NVM Endurance, Retention and Operating LifeJESD22-A117 25°C

500 hours

3 lots, N=>39Q048257 Q048332 Q0486200/44

0/44

0/44

2

2

2

3 lots 0/132Pass
NVM Endurance, Retention and Operating LifeJESD22-A117 + JESD22-A103

150°C, 1000 hours

3 lots, N=>39Q048331 Q048262 Q0486210/44

0/44

0/44

2

2

2

3 lots 0/132Pass
Test Group E – Electrical Verification
ESD-HMBJS-0011 lot, N=>3Q0485122.5 kVClass 2
ESD-CDMJS-0021 lot, N=>3Q0494783TC 250Class C1
Latch UpJESD78

±100mA; Overvoltage=3.8V

1 lot, N=>3Q048513 Q04850925 °C

105 °C

Pass

Reliability Prediction

Reliability Prediction Approach

  • Apply Telcordia SR-232 Issue 3 Parts Count calculation
  • Confidence Level 90%
  • Quality Level II
Lyra 24S40C105C
FIT (10-9)581092
MTBF (Mhours)170.9

Regulatory, Qualification & Certifications

Regulatory Approvals

Note:  For complete regulatory information, refer to the Lyra 24S Regulatory Information document which is also available from the product page https://www.ezurio.com/wireless-modules/bluetooth-modules/bluetooth-5-modules/lyra-24-series-bluetooth-5-modules

The Lyra 24S holds current certifications in the following countries:

Country/RegionRegulatory ID
USA (FCC)SQG-LYRA24S
Canada (ISED)3147A-LYRA24S
UK (UKCA)N/A
EUN/A
Japan (MIC)201-230070
Korea (KC)R-C-L8C-LYRA24S
Australia (AS)N/A
New Zealand (NZS)N/A

Certified Antennas

ManufacturerModelEzurio Connectivity
Part Number
Weight
(g)
Dimensions (mm)TypeConnectorPeak Gain 2400-2500 MHzPeak Gain 2400-2480 MHz
Ezurio

(Laird Connectivity)

NanoBlueEBL2400A1-10MH4L244.45 x 12.7 x 0.81PCB DipoleIPEX MHF42 dBi-
Ezurio

(Laird Connectivity)

FlexPIFA001-00221.1340.1 x 11.0 x 2.5PIFAIPEX MHF4-2 dBi
Mag LayersEDA-8709-2G4C1-B27-CY0600-00057NANADipoleIPEX MHF42 dBi-
Ezurio

(Laird Connectivity)

mFlexPIFAEFA2400A3S-10MH4L1.825.4 × 23.4 × 2.5PIFAIPEX MHF4-2 dBi

Maximum Regulatory Certified RF TX Power per Country

For shipped AT Firmware

Ezurio AT firmware implements maximum RF TX power settings per country highlighted below.

Country and implementationGlobalEUUKUSACanadaAustraliaNew ZealandJapanSouth Korea
AT FWRegion codeGLEUUKUSCAAUNZJPSK
AFHTurned on or off?ononononononononon
10dBm modeTarget TX power conducted7dBm7dBm7dBm10dBm10dBm7dBm7dBm9dBm10dBm
Antenna Gain setting0dBi0dBi0dBi0dBi0dBi0dBi0dBi0dBi0dBi
TX power setting7dBm7dBm7dBm10dBm10dBm7dBm7dBm9dBm10dBm

453-00170 Lyra 24P – Bluetooth v5.4 PCB Module (10dBm) with Integrated Antenna is shipped AT firmware where the radio regulatory region “global” is set which is lowest common settings across RF TX power across certified countries. To switch to the specific radio regulatory region country of USA, Canada, Europe, UK, Australia, New Zealand, Japan and South Korea, customer can use appropriate AT command for setting the radio regulatory region per country.

For Customers C Code Development -

Customers developing with C Code – Full software development with Silicon Labs SDK and Toolchain, MUST implement the maximum RF TX power settings per country and other parameters mentioned in this section.

AFH Firmware Module Description

See Silabs AFH firmware module (in Silabs BLE stack) operation description https://docs.silabs.com/bluetooth/5.0/general/system-and-performance/adaptive-frequency-hopping

This was enabled for CE Adaptivity requirements (since Lyra 24S declared as Adaptive for CE), so left enabled for all certified countries.

Europe (CE), UK (UKCA), Australia (RCM, New Zealand (RCM) Radio RF TX power Table

Module Ezurio Part number453-000170
DescriptionModule, SIP, Lyra 24S, Integrated Antenna (Silicon Labs EFR32BG24)
Antenna Gain (dBi)1.48dBi peak for Integrated antenna.  2.0dBi peak external antenna.
Radio Regulatory country: Europe (CE), CANADA (ISED), Australia (RCM), New Zealand (RCM)
Declared as FHSS or DTS?DTS
AFH FW module?AFH firmware module turned ON (so CE Adaptivity met).

Silabs BLE SDK:

Silabs Gecko SDK Suite:

5.0.0.0 GA (December 14, 2022).                                                                                                                                          4.2 (December 14, 2022).   
10dBm mode

CERTIFIED maximum conducted RF TX power per BLE PHY

 

(below is for when Lyra 24S is connected to an external antenna of 2dBi peak gain, use this RF TX power setting for Integrated antenna (1.48dBi) as well). 

CERTIFIED LOWEST COMMON RF TX power setting across BLE PHY’s, other restrict…

IMPLEMENTED in Ezurio AT FW

or customer MUST implement in customers own developed C-code.

AFH firmware module turned ON.

NOTE 1NOTE 2NOTE 3NOTE 4ANOTE 4B
BLE PHYPhysical channel (channel Index)Frequency (MHz) channel centre. Certified conducted Maximum TX Power setting dBmMeasured Conducted Peak POWER
(dBm)
Certified Lowest common conducted certified RF TX power setting across all 4 BLE data rates.Target RF TX power conducted to implement in FW. Other restrictions (if any).Antenna Gain setting in FWTX power setting in FW
BLE 1MbpsCH0 (CH37)2402 MHz7dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)2480 MHz7dBm7.16dBm7dBm7dBm0dBi7dBm
BLE 2MbpsCH1 (CH0)2404 MHz7dBm7.46dBm7dBm7dBm0dBi7dBm
CH38 (CH36)2478 MHz7dBm7.16dBm7dBm7dBm0dBi7dBm
BLE 125kbpsCH0 (CH37)2402 MHz7dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)2480 MHz7dBm7.17dBm7dBm7dBm0dBi7dBm
BLE 500kbpsCH0 (CH37)2402 MHz7dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)2480 MHz7dBm7.17dBm7dBm7dBm0dBi7dBm

Notes:

NOTE 1:  CERTIFIED maximum conducted RF TX power per BLE PHY. This is not what is implemented in AT firmware, this is what was certified only.   

NOTE 2: Certified Lowest common TX power setting across BLE PHY’s.   This lowest common TX power setting is stated since we do not use per BLE RF TX power setting in AT firmware, but same TX power setting across all 4 BLE PHY’s.

NOTE 3: IMPLEMENT in AT firmware target RF TX power conducted. This target actual implemented in AT firmware.  So for CE, UKCA, RCM (Australia and New Zealand), this is actual target 7dBm conducted).                                                                                    To implement that, NOTE 4A defines what Antenna Gain setting MUST be used and NOTE 4B defines what TX power setting MUST be used.

NOTE 4: IMPLEMENTED in AT firmware (or MUST implement in customers own developed C-code) the Actual target RF TX power conducted:

NOTE 4A:  the Antenna Gain setting of 0dBi and

NOTE 4B:  the TX power setting to 7dBm  which results in:

Target Actual RF TX power (dBm) = TX power setting (dBm) - Antenna Gain setting(dBi)

7dBm   = 7dBm – 0dBi

USA (FCC), Canada (ISED) Radio RF TX power Table

Module Ezurio Part number453-000170
DescriptionModule, SIP, Lyra 24S, Integrated Antenna (Silicon Labs EFR32BG24)
Antenna Gain (dBi)1.48dBi peak for Integrated antenna.  2.0dBi peak external antenna.
Radio Regulatory country: USA (FCC) and CANADA (ISED)
Declared as FHSS or DTS?DTS
AFH FW module?AFH firmware module turned ON.

Silabs BLE SDK:

Silabs Gecko SDK Suite:

5.0.0.0 GA (December 14, 2022).                                                                                                                                          4.2 (December 14, 2022).   
10dBm modeCERTIFIED maximum conducted RF TX power per BLE PHYCERTIFIED LOWEST COMMON RF TX power setting across BLE PHY’s, other restrict…

Implemented in Ezurio AT FW

or customer MUST implement in customers own developed C-code.

AFH firmware module turned ON.

NOTE 1NOTE 2NOTE 3NOTE 4ANOTE 4B
BLE PHYPhysical channel (channel Index)Frequency (MHz) channel centre.Certified conducted Maximum TX Power setting dBmMeasured Conducted Peak POWER
(dBm)
Certified Lowest common conducted certified RF TX power setting across all 4 BLE data rates.Target RF TX power conducted to implement in FW. Other restrictions (if any).Antenna Gain setting in FWTX power setting in FW
BLE 1MbpsCH0 (CH37)2402 MHz10dBm10.27dBm10dBm10dBm0dBi10dBm
CH39 (CH39)2480 MHz10dBm9.72dBm10dBm10dBm0dBi10dBm
BLE 2MbpsCH1 (CH0)2404 MHz10dBm10.26dBm10dBm10dBm0dBi10dBm
CH38 (CH36)2478 MHz10dBm9.71dBm10dBm10dBm0dBi10dBm
BLE 125kbpsCH0 (CH37)2402 MHz10dBm10.25dBm10dBm10dBm0dBi10dBm
CH39 (CH39)2480 MHz10dBm9.70dBm10dBm10dBm0dBi10dBm
BLE 500kbpsCH0 (CH37)2402 MHz10dBm10.24dBm10dBm10dBm0dBi10dBm
CH39 (CH39)2480 MHz10dBm9.69dBm10dBm10dBm0dBi10dBm

Notes:

NOTE 1: CERTIFIED maximum conducted RF TX power per BLE PHY.    This is not what is implemented in AT firmware, this is what was certified only.   

NOTE 2: Certified Lowest common TX power setting across BLE PHY’s.   This lowest common TX power setting is stated since we do not use per BLE RF TX power setting in AT firmware, but same TX power setting across all 4 BLE PHY’s.

NOTE 3: IMPLEMENT in AT firmware target RF TX power conducted. This target actual implemented in AT firmware.  So for Usa(FCC), Canada (ISED) this is actual target 10dBm conducted).                                                                                                        To implement that, NOTE 4A defines what Antenna Gain setting MUST be used and NOTE 4B defines what TX power setting MUST be used.

NOTE 4:IMPLEMENTED in AT firmware (or MUST implement in customers own developed C-code) the Actual target RF TX power conducted:-

NOTE 4A:  the Antenna Gain setting of 0dBi and

NOTE 4B:  the TX power setting to 10dBm which results in:

Target Actual RF TX power (dBm) = TX power setting (dBm) - Antenna Gain setting(dBi)

10dBm   = 10dBm – 0dBi

Japan (MIC) Radio RF TX Power Table

Module Ezurio Part number453-000170
DescriptionModule, SIP, Lyra 24S, Integrated Antenna (Silicon Labs EFR32BG24)
Antenna Gain (dBi)1.48dBi peak for Integrated antenna.  2.0dBi peak external antenna.
Radio Regulatory country: Japan (MIC)
Declared as FHSS or DTS?DTS
AFH FW module?AFH firmware module turned ON.
Silabs BLE SDK:5.0.0.0 GA (December 14, 2022).                                                                                                                                         
Silabs Gecko SDK Suite:4.2 (December 14, 2022).   
10dBm modeCERTIFIED maximum conducted RF TX power per BLE PHYCERTIFIED LOWEST COMMON RF TX power setting across BLE PHY’s, other restrict…

IMPLEMENTED in Ezurio AT FW

or customer MUST implement in customers own developed C-code.

AFH firmware module turned ON.

NOTE 1NOTE 2NOTE 3NOTE 4ANOTE 4B
BLE PHYPhysical channel (channel Index)Frequency (MHz) channel centre. Certified conducted Maximum TX Power setting dBmMeasured Conducted Peak POWER
(dBm)
Certified Lowest common conducted certified RF TX power setting across all 4 BLE data rates.Target RF TX power conducted to implement in FW. Other restrictions (if any).Antenna Gain setting in FWTX power setting in FW
BLE 1MbpsCH0 (CH37)2402 MHz9dBm9.01dBm9dBm9dBm0dBi9dBm
CH39 (CH39)2480 MHz9dBm8.67dBm9dBm9dBm0dBi9dBm
BLE 2MbpsCH1 (CH0)2404 MHz9dBm8.99dBm9dBm9dBm0dBi9dBm
CH38 (CH36)2478 MHz9dBm8.67dBm9dBm9dBm0dBi9dBm
BLE 125kbpsCH0 (CH37)2402 MHz9dBm8.97dBm9dBm9dBm0dBi9dBm
CH39 (CH39)2480 MHz9dBm8.64dBm9dBm9dBm0dBi9dBm
BLE 500kbpsCH0 (CH37)2402 MHz9dBm8.99dBm9dBm9dBm0dBi9dBm
CH39 (CH39)2480 MHz9dBm8.65dBm9dBm9dBm0dBi9dBm

Notes:

NOTE 1: CERTIFIED maximum conducted RF TX power per BLE PHY.    This is not what is implemented in AT firmware, this is what was certified only.   

NOTE 2: Certified Lowest common TX power setting across BLE PHY’s.   This lowest common TX power setting is stated since we do not use per BLE RF TX power setting in AT firmware, but same TX power setting across all 4 BLE PHY’s.

NOTE 3: IMPLEMENT in AT firmware target RF TX power conducted. This target actual implemented in AT firmware.  So for Japan (MIC), this is actual target 9dBm conducted).                                                                                                                                          To implement that, NOTE 4A defines what Antenna Gain setting MUST be used and NOTE 4B defines what TX power setting MUST be used.

NOTE 4: IMPLEMENTED in AT firmware (or MUST implement in customers own developed C-code) the Actual target RF TX power conducted:-

NOTE 4A:  the Antenna Gain setting of 0dBi and

NOTE 4B:  the TX power setting to 9dBm which results in:

Target Actual RF TX power (dBm) = TX power setting (dBm) - Antenna Gain setting(dBi)

9dBm   = 9dBm – 0dBi

South Korea Radio RF TX Power Table

Module Ezurio Part number453-000170
DescriptionModule, SIP, Lyra 24S, Integrated Antenna (Silicon Labs EFR32BG24)
Antenna Gain (dBi)1.48dBi peak for Integrated antenna.  2.0dBi peak external antenna.
Radio Regulatory country: South Korea
Declared as FHSS or DTS?FHSS (uses Silabs AFH FW module ON)
AFH FW module?AFH firmware module turned ON.

Silabs BLE SDK:

Silabs Gecko SDK Suite:

5.0.0.0 GA (December 14, 2022)

4.2 (December 14, 2022).   

10dBm modeCERTIFIED maximum conducted RF TX power per BLE PHYCERTIFIED LOWEST COMMON RF TX power setting across BLE PHY’s, other restrict…

IMPLEMENTED in Ezurio AT FW

or customer MUST implement in customers own developed C-code.

AFH firmware module turned ON.

NOTE 1NOTE 2NOTE 3NOTE 4ANOTE 4B
BLE PHYPhysical channel (channel Index)Frequency (MHz) channel centre. Certified conducted Maximum TX Power setting dBmCertified Measured Conducted Peak POWER
(dBm)
Certified Lowest common conducted certified RF TX power setting across all 4 BLE data rates.Target RF TX power conducted to implement in FW. Other restrictions (if any).Antenna Gain setting in FWTX power setting in FW
BLE 1MbpsCH0 (CH37)240210dBm10dBm10dBm0dBi10dBm
CH39 (CH39)248010dBm10dBm10dBm0dBi10dBm
BLE 2MbpsCH1 (CH0)240410dBm10dBm10dBm0dBi10dBm
CH38 (CH36)247810dBm10dBm10dBm0dBi10dBm
BLE 125kbpsCH0 (CH37)240210dBm10dBm10dBm0dBi10dBm
CH39 (CH39)248010dBm10dBm10dBm0dBi10dBm
BLE 500kbpsCH0 (CH37)240210dBm10dBm10dBm0dBi10dBm
CH39 (CH39)248010dBm10dBm10dBm0dBi10dBm

Notes:

NOTE 1: CERTIFIED maximum conducted RF TX power per BLE PHY in 20dBm mode or 10dBm mode tables.    This is not what is implemented in AT firmware, this is what was certified only.   

NOTE 2: Certified Lowest common TX power setting across BLE PHY’s.   This lowest common TX power setting is stated since we do not use per BLE RF TX power setting in AT firmware, but same TX power setting across all 4 BLE PHY’s.

NOTE 3: IMPLEMENT in AT firmware target RF TX power conducted. This target actual implemented in AT firmware.  So for South Korea, this is actual target 10dBm conducted).  

To implement that, NOTE 4A defines what Antenna Gain setting MUST be used and NOTE 4B defines what TX power setting MUST be used.

NOTE 4: IMPLEMENTED in AT firmware (or MUST implement in customers own developed C-code) the Actual target RF TX power conducted:-

NOTE 4A:  the Antenna Gain setting of 0dBi and

NOTE 4B:  the TX power setting to 10dBm which results in:

Target Actual RF TX power (dBm) = TX power setting (dBm) - Antenna Gain setting(dBi)

10dBm   = 10dBm – 0dBi

Global (Lowest Common Across Certified Countries) Radio RF TX Power Table

Module Ezurio Part number453-000170
DescriptionModule, SIP, Lyra 24S, Integrated Antenna (Silicon Labs EFR32BG24)
Antenna Gain (dBi)1.48dBi peak for Integrated antenna.  2.0dBi peak external antenna.
Radio Regulatory country: Global (lowest common across certified countries)
Declared as FHSS or DTS?FHSS
AFH FW module?AFH firmware module turned ON.
Silabs BLE SDK:5.0.0.0 GA (December 14, 2022).                                                                                                                                   
Silabs Gecko SDK Suite:4.2 (December 14, 2022).   
10dBm modeCERTIFIED maximum conducted RF TX power per BLE PHYCERTIFIED LOWEST COMMON RF TX power setting across BLE PHY’s, other restrict…

IMPLEMENTED in Ezurio AT FW

or customer MUST implement in customers own developed C-code.

AFH firmware module turned ON.

NOTE 1NOTE 2NOTE 3NOTE 4ANOTE 4B
BLE PHYPhysical channel (channel Index)Frequency (MHz) channel centre. Certified conducted Maximum TX Power setting dBmCertified Measured Conducted Peak POWER
(dBm)
Certified Lowest common conducted certified RF TX power setting across all 4 BLE data rates.Target RF TX power conducted to implement in FW. Other restrictions (if any).Antenna Gain setting in FWTX power setting in FW
BLE 1MbpsCH0 (CH37)24027dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)24807dBm7.16dBm7dBm7dBm0dBi7dBm
BLE 2MbpsCH1 (CH0)24047dBm7.46dBm7dBm7dBm0dBi7dBm
CH38 (CH36)24787dBm7.16dBm7dBm7dBm0dBi7dBm
BLE 125kbpsCH0 (CH37)24027dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)24807dBm7.17dBm7dBm7dBm0dBi7dBm
BLE 500kbpsCH0 (CH37)24027dBm7.45dBm7dBm7dBm0dBi7dBm
CH39 (CH39)24807dBm7.17dBm7dBm7dBm0dBi7dBm

NOTE 1: CERTIFIED maximum conducted RF TX power per BLE PHY in 20dBm mode or 10dBm mode tables.    This is not what is implemented in AT firmware, this is what was certified only.   

NOTE 2: Certified Lowest common TX power setting across BLE PHY’s.   This lowest common TX power setting is stated since we do not use per BLE RF TX power setting in AT firmware, but same TX power setting across all 4 BLE PHY’s.

NOTE 3: IMPLEMENT in AT firmware target RF TX power conducted. This target actual implemented in AT firmware.  So for Global (lowest common across certified countries), this is actual target 7dBm conducted). 

To implement that, NOTE 4A defines what Antenna Gain setting MUST be used and NOTE 4B defines what TX power setting MUST be used.

NOTE 4: IMPLEMENTED in AT firmware (or MUST implement in customers own developed C-code) the Actual target RF TX power conducted:-

NOTE 4A:  the Antenna Gain setting of 0dBi and

NOTE 4B:  the TX power setting to 7dBm which results in:

Target Actual RF TX power (dBm) = TX power setting (dBm) - Antenna Gain setting(dBi)

7dBm   = 7dBm – 0dBi

Bluetooth SIG Qualification

The Bluetooth Qualification Process promotes global product interoperability and reinforces the strength of the Bluetooth® brand and ecosystem to the benefit of all Bluetooth SIG members. The Bluetooth Qualification Process helps member companies ensure their products that incorporate Bluetooth technology comply with the Bluetooth Patent & Copyright License Agreement and the Bluetooth Trademark License Agreement (collectively, the Bluetooth License Agreement) and Bluetooth Specifications.

The Bluetooth Qualification Process is defined by the Qualification Program Reference Document (QPRD) v3.

To demonstrate that a product complies with the Bluetooth Specification(s), each member must for each of its products:

  • Identify the product, the design included in the product, the Bluetooth Specifications that the design implements, and the features of each implemented specification
  • Complete the Bluetooth Qualification Process by submitting the required documentation for the product under a user account belonging to your company

The Bluetooth Qualification Process consists of the phases shown below:

image-20250916-191649.png

To complete the Qualification Process the company developing a Bluetooth End Product shall be a member of the Bluetooth SIG.  To start the application please use the following link: Apply for Adopter Membership

Scope

This guide is intended to provide guidance on the Bluetooth Qualification Process for End Products that reference multiple existing designs, that have not been modified, (refer to Section 3.2.2.1 of the Qualification Program Reference Document v3).

For a Product that includes a new Design created by combining two or more unmodified designs that have DNs or QDIDs into one of the permitted combinations in Table 3.1 of the QPRDv3, a Member must also provide the following information:

  • DNs or QDIDs for Designs included in the new Design
  • The desired Core Configuration of the new Design (if applicable, see Table 3.1 below)
  • The active TCRL Package version used for checking the applicable Core Configuration (including transport compatibility) and evaluating test requirements

Any included Design must not implement any Layers using withdrawn specification(s).

When creating a new Design using Option 2a, the Inter-Layer Dependency (ILD) between Layers included in the Design will be checked based on the latest TCRL Package version used among the included Designs.

For the purposes of this document, it is assumed that the member is combining unmodified Core-Controller Configuration and Core-Host Configuration designs, to complete a Core-Complete Configuration.

Qualification Steps When Referencing a single existing design, (unmodified) – Option 1 in the QPRDv3

For this qualification, follow these steps:

  1. To start a listing, go to: https://qualification.bluetooth.com/
  1. Select Start the Bluetooth Qualification Process.
  1. Product Details to be entered:
  • Project Name (this can be the product name or the Bluetooth Design name).
  • Product Description
  • Model Number
  • Product Publication Date (the product publication date may not be later than 90 days after submission)
  • Product Website (optional)
  • Internal Visibility (this will define if the product will be visible to other users prior to publication)
  • If you have multiple End Products to list then you can select ‘Import Multiple Products’, firstly downloading and completing the template, then by ‘Upload Product List’.  This will populate Qualification Workspace with all your products.
  1. Specify the Design:
  • Do you include any existing Design(s) in your Product? Answer Yes, I do.
  • Enter the single DN or QDID used in your, (for Option 1 only one DN or QDID can be referenced)
  • Once the DN or QDID is selected it will appear on the left-hand side, indicating the layers covered by the design.
  • Select ‘I’m finished entering DN’s
  • What do you want to do next? Answer, ‘Use this Design without Modification’
  • Save and go to Product Qualification Fee
  1. Product Qualification Fee:
  • It’s important to make sure a Prepaid Product Qualification fee is available as it is required at this stage to complete the Qualification Process.
  • Prepaid Product Qualification Fee’s will appear in the available list so select one for the listing.
  • If one is not available select ‘Pay Product Qualification Fee’, payment can be done immediately via credit card, or you can pay via Invoice.  Payment via credit will release the number immediately, if paying via invoice the number will not be released until the invoice is paid.
  • Once you have selected the Prepaid Qualification Fee, select ‘Save and go to Submission’
  1. Submission:
  • Some automatic checks occur to ensure all submission requirements are complete.
  • To complete the listing any errors must be corrected
  • Once you have confirmed all design information is correct, tick all of the three check boxes and add your name to the signature page.
  • Now select ‘Complete the Submission’.
  • You will be asked a final time to confirm you want to proceed with the submission, select ‘Complete the Submission’.
  • Qualification Workspace will confirm the submission has been submitted.  The Bluetooth SIG will email confirmation once the submission has been accepted, (normally this takes 1 working day).
  1. Download Product and Design Details:
  • You can now download a copy of the confirmed listing from the design listing page and save a copy in your Compliance Folder

For further information, please refer to the following webpage:

https://www.bluetooth.com/develop-with-bluetooth/qualification-listing/

Example Design Combinations

The following gives an example of a design possible under option 1:

Ezurio End Product design using Silicon Labs Component based design

Design NameOwnerDeclaration IDQD IDLink to listing on the SIG website
Lyra 24P / Lyra 24SEzurioD063149221359https://qualification.bluetooth.com/ListingDetails/192322

Qualify More Products

If you develop further products based on the same design in the future, it is possible to add them free of charge.  The new product must not modify the existing design i.e add ICS functionality, otherwise a new design listing will be required.

To add more products to your design, select ‘Manage Submitted Products’ in the Getting Started page, Actions, Qualify More Products.  The tool will take you through the updating process.

Ordering Information

Lyra 24S series modules operate in the 2.4 GHz ISM frequency band (BLE range: 2402-2480MHz).

The maximum RF TX power allowed by different regional regulatory authorities may differ from the maximum output power a module can produce. End-product manufacturers must then verify that the module is configured to meet the regulatory limits for each region in accordance with the local rules and the formal certification test reports.

See section Maximum Regulatory Certified RF TX Power per Country.

Lyra 24S modules are pre-programmed with Lyra 24S BGAPI UART/OTA DFU bootloader. Lyra 24S AT firmware can be loaded by the customer (via SWD interface or via boot loader (UART or OTA)).

PartDescription
453-00170CModule, SIP, LYRA 24S, Integrated Antenna (Silicon Labs EFR32BG24) – Cut/Tape
453-00170RModule, SIP, LYRA 24S, Integrated Antenna (Silicon Labs EFR32BG24) – Tape/Reel
453-00170-K1Development Kit, SIP, LYRA 24S, Integrated Antenna

Legacy - Revision History

VersionDateNotesContributorsApprover
1.024 May 2023Initial ReleaseRobert Gosewehr, Raj Khatri,
Dave Drogowski
Jonathan Kaye
1.126 Jun 2023Added content for section 13.2 Maximum Regulatory Certified RF TX Power per CountryRaj KhatriJonathan Kaye
1.231 Aug 2023Removed mention of Matter support.Dave DrogowskiJonathan Kaye
1.315 Sept 2023Updated Bluetooth SIG Qualification.

Updated to Bluetooth 5.4

Dave DrogowskiJonathan Kaye
1.427 Mar 2024Changed Laird Connectivity to EzurioRaj KhatriJonathan Kaye
1.530 Oct 2024Updated Bluetooth SIG Qualification.Dave DrogowskiJonathan Kaye
2.011 Mar 2025Ezurio rebrandingSue WhiteDave Drogowski